CoolMOS Power Transistor

Features ? Lowest figure-of-merit RONxQg ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard switching SMPS topologies

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INFINEON

英飛凌

isc N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.299? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

CoolMOS? CP, Infineon's fifth series of CoolMOS?, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. ·Lowest figure of merit R on x Q g\n ·Ultra low gate charge\n ·Extreme dv/dt rate\n ·Ultra low R DS(on), ultra low gate charge, very fast switching\n ·V th 3 V, g fs very high, internal R g very low\n ·High current capability\n ·Significant reduction of conduction and switching losses\n ·High;

Infineon

英飛凌

600V CoolMOS CP Power Transistor

Description The CoolMOS? CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features ? Reduced boar

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INFINEON

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.65794 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

CoolMOS Power Transistor

CoolMOS? Power Transistor Features ? Lowest figure-of-merit RONxQg ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard swi

文件：334.48 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌