isc N-Channel MOSFET Transistor

文件：315.42 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Halogen-free according to IEC61249-2-21 ? Id

文件：426.96 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

OptiMOSTM3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Halogen-free according to IEC61249-2-21 ? Id

文件：694.82 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

OptiMOS3 Power-Transistor

文件：737.83 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

OptiMOS3 Power-Transistor

文件：737.83 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

N 溝道功率 MOSFET

Infineon's 250V OptiMOS? products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. ? Industry’s lowest R DS(on)\n? Lowest Q g and Q gd\n? World’s lowest FOM RoHS comliant ? halogen free MSL 1 rated\n\n優(yōu)勢:\n? Highest efficiency\n? Highest Power density\n? Lowest board space consumption\n? Minimal device paralleling required\n? System cost improvement\n? Enviromentally friendly\n? E;

Infineon

英飛凌