isc N-Channel MOSFET Transistor

? DESCRITION ? Efficient and reliable device for use in a wide variety of applications ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤7.5m? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and re

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OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

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絲?。?a target="_blank" title="Marking" href="/075n15n/marking.html">075N15N；Package：PG-TO262-3；3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

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OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

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OptiMOS 3 Power-Transistor

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N 溝道功率 MOSFET

The 150V OptiMOS? achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS? part. ? Excellent switching performance\n? World’s lowest R DS(on)\n? Very low Q g and Q gd\n? Excellent gate charge x R DS(on) product (FOM)\n? RoHS compliant-halogen free\n? MSL1 rated 2\n\n優(yōu)勢(shì):\n? Environmentally friendly\n? Increased efficiency\n? Highest power density\n? Less paralleling required\n? S;

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