絲?。?a target="_blank" title="Marking" href="/65a099f7/marking.html">65A099F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

文件：1.48002 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

650 V CoolMOS? CFD7A N-channel automotive SJ power MOSFET in HDSOP-22 top-side cooling

\n優(yōu)勢(shì):\n? Better utilization of PCB space\n? Highest reliability for automotive appl.\n? Optimized power loop\n? Decoupling of thermals from substrate\n? Enabling of higher power density designs\n? Scalable for use in PFC and DC-DC stage\n? Granular portfolio available;

Infineon

英飛凌

MOSFET 650V CoolMOS? CFD7A SJ Power Device

文件：1.75875 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe

文件：1.49555 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 650V CoolMOS? CFD7A SJ Power Device

文件：1.54016 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌