絲印：60R075F7；Package：PG-HDSOP-22；600V CoolMOSa CFD7 Power Transistor

Features ? Ultra-fast body diode ? Low gate charge ? Best-in-class reverse recovery charge (Qrr) ? Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? Best-in-class RDS(on) in SMD and THD packages Potential applications Suitable for Soft S

文件：1.18538 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

英飛凌對諧振高功率拓撲的回答

Infineon’s answer to resonant high power topologies ? Ultra-fast body diode\n? Best-in-class reverse recovery charge (Qrr)\n? Improved reverse diode dv/dt and dif/dt ruggedness\n? Lowest FOM RDS(on)x Qgand Eoss\n? Best-in-class RDS(on)/package combinations\n\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness\n? Highest reliability for resonant topolog;

Infineon

英飛凌

3300 W 54 V bi-directional phase-shift fullbridge with 600 V CoolMOS CFD7 and XMC

Scope and purpose This document introduces a complete Infineon Technologies AG system solution for a 3300 W bi-directional DC-DC converter that achieves 98 percent efficiency in buck mode and 97 percent in boost mode. The EVAL_3K3W_BIDI_PSFB board is a DC-DC stage with telecom-level output real

文件：4.68189 Mbytes 頁數(shù)：44 Pages

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Transistor

文件：1.41918 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Transistor

文件：1.29047 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌