650V、N 通道、最大 660 mΩ、汽車 MOSFET、DPAK、CoolMOS ? CFDA

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ;

Infineon

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.42987 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

650V CoolMOS CFD Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

文件：3.9515 Mbytes 頁數(shù)：20 Pages

INFINEON

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

文件：4.46997 Mbytes 頁數(shù)：21 Pages

INFINEON

英飛凌

isc N-Channel MOSFET Transistor

? DESCRIPTION ? Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.66? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations f

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ISC

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