650V CoolMOS E6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

文件：1.9041 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Very high commutation ruggedness ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.38? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌

500 V-950 V CoolMOS? N 溝道功率 MOSFET

CoolMOS? C6/E6系列將 Infineon 作為領(lǐng)先的SJ MOSFET供應(yīng)商的經(jīng)驗與一流的創(chuàng)新相結(jié)合。這些器件提供了快速開關(guān) SJ MOSFET 的所有優(yōu)點，同時又不犧牲易用性。極低的開關(guān)和傳導(dǎo)損耗使開關(guān)應(yīng)用更加高效、緊湊、輕巧且散熱性更好。600V CoolMOS ? E6 可替代 600V CoolMOS ? C3。650V CoolMOS ? E6 可替代 650V CoolMOS ? C3。 ? 易于控制開關(guān)行為\n? 非常高的換向堅固性\n? 由于品質(zhì)因數(shù) (R DS(ON)*Q g) 和 E oss) 非常低，損耗也極低\n? 易于使用\n? 與 C3 相比，輕載效率更高\n? 憑借久經(jīng)考驗的 CoolMOS ?品質(zhì)和高體二極管堅固性，實現(xiàn)了卓越的可靠性\n? 與前幾代 CoolMOS ?相比，性價比更高\n? 更高效、更緊湊、更輕便、更散熱;

Infineon

英飛凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌