650V CoolMOS??C7 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Increased MOSFET dv/dt ruggedness ? Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(o

文件：1.68375 Mbytes 頁數(shù)：15 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Fast switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.225? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.34 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

英飛凌的 CoolMOS? C7 超結 MOSFET 系列是技術的一次突破性進步，在全球范圍內實現(xiàn)了低 RDS(on)/封裝，并且得益于其低開關損耗，可在全負載范圍內提高效率。 ? 650V 電壓\n? 具有突破性且出色的R DS(on)/封裝\n? 減少儲存在輸出電容中的能量 (Eoss)\n? 低柵極電荷Qg\n? 通過使用更小的封裝或減少零部件節(jié)省空間\n? 在超結技術領域擁有 12 年的制造經驗\n\n優(yōu)勢:\n? 提高安全裕度，適用于 SMPS 和太陽能逆變器應用\n? 低通態(tài)損耗/小封裝\n? 低開關損耗\n? 提高輕載效率\n? 增加功率密度\n? 出色的CoolMOS?質量;

Infineon

英飛凌

N-Channel MOSFET Transistor

? DESCRIPTION ? Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.225? ? Enhancement mode ? Fast Switching Speed

文件：338.8 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

650V CoolMOS??C7 Power Transistor

650V CoolMOS? C7 Power Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Applications PFC stages and hard switching PWM stages for e.g. Computing, Serve

文件：1.70039 Mbytes 頁數(shù)：15 Pages

INFINEON

英飛凌