N-Channel MOSFET Transistor

? DESCRITION ? Fast switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤64m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.33 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

OptiMOS? Power-Transistor

Features ? For fast switching converters and sync. rectification ? N-channel enhancement - logic level ? 175 °C operating temperature ? Avalanche rated ? Pb-free lead plating, RoHS compliant

文件：352.81 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

N-Channel 6 0-V (D-S) MOSFET

文件：988.74 Kbytes 頁數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

OptiMOS? Power-Transistor Features For fast switching converters and sync. rectification

文件：509.41 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

OptiMOS? Power-Transistor Features For fast switching converters and sync. rectification

文件：509.41 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

N 溝道功率 MOSFET

OptiMOS? 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and f ? Excellent gate charge x R DS(on) product (FOM)\n? Very low on-resistance R DS(on)\n? Ideal for fast switching applications\n? RoHS compliant - halogen free\n? MSL1 rated\n\n優(yōu)勢:\n? Highest system efficiency\n? Less paralleling required\n? Increased power density\n? System cost reduction\n? Very low;

Infineon

英飛凌