首頁 >IPD60R180P7>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPD60R180P7 | 絲?。?a target="_blank" title="Marking" href="/60r180p7/marking.html">60R180P7；Package：PG-TO252-3；600V CoolMOS? P7 Power Transistor MOSFET 600V CoolMOSa P7 Power Transistor The CoolMOS? 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS? P7 series is the successor to the CoolMOS? P 文件：1.21372 Mbytes 頁數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON | |
IPD60R180P7 | 絲印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor 文件：328.32 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IPD60R180P7 | Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS? P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS? P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS? 7th generation platfor Efficiency \n ? 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n ? Integrated ESD diode from 180mN and above R DS(on)s\n? Integrated gate resistor R G\n? Rugged body diode\n? Wide portfolio in through hole and surface mount packages\n? Both standard grade and industrial ; | Infineon 英飛凌 | Infineon | |
絲?。?a target="_blank" title="Marking" href="/60s180p7/marking.html">60S180P7；Package：PG-TO252-3；600V CoolMOS? P7 Power Transistor MOSFET 600V CoolMOSa P7 Power Transistor The CoolMOS? 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS? P7 series is the successor to the CoolMOS? P 文件：1.09526 Mbytes 頁數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON | ||
isc N-Channel MOSFET Transistor 文件：328.32 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS? P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS? P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS? 7th generation platfor Efficiency \n ? 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n ? Integrated ESD diode from 180mN and above R DS(on)s\n? Integrated gate resistor R G\n? Rugged body diode\n? Wide portfolio in through hole and surface mount packages\n? Both standard grade and industrial ; | Infineon 英飛凌 | Infineon |
技術(shù)參數(shù)
- OPN：
IPD60R180P7ATMA1
- Qualification：
Non-Automotive
- Package name：
PG-TO252-3
- VDS max：
600 V
- RDS (on) @10V max：
180 m?
- ID @25°C max：
18 A
- QG typ @10V：
25 nC
- Special Features：
price/performance
- Polarity：
N
- Operating Temperature min：
-55 °C
- Operating Temperature max：
150 °C
- VGS(th) min：
3 V
- VGS(th) max：
4 V
- Technology：
CoolMOS? P7
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
sot |
6600 |
正品渠道現(xiàn)貨,終端可提供BOM表配單。 |
詢價(jià) | ||
INFINEON/英飛凌 |
25+ |
TO-252 |
32360 |
INFINEON/英飛凌全新特價(jià)IPD60R180P7即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
INFINEON |
18+ |
TO-252 |
7500 |
全新原裝公司現(xiàn)貨
|
詢價(jià) | ||
INFINEON |
25+ |
TO-252 |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||||
INFINEON |
23+ |
TO-252 |
20000 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
Infineon(英飛凌) |
25+ |
TO-252-2 |
18798 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價(jià) | ||
Infineon(英飛凌) |
25+ |
TO-252-2 |
18798 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價(jià) | ||
INFINEON |
23+ |
TO252 |
2600 |
詢價(jià) |
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