絲?。?a target="_blank" title="Marking" href="/60r180c8/marking.html">60R180C8；Package：PG-TO252-3；MOSFET 600V CoolMOSa CM8 Power Transistor

Features ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Significant reduction of switching and conduction losses ? Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits ? Ease of use and fast design-in throug

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IPD60R180CM8 - 600 V CoolMOS ? 8 功率晶體管

600 V CoolMOS ? 8 SJ MOSFET 系列是 600 V CoolMOS ? 7 MOSFET 系列（包括 P7、S7、CFD7、C7 (G7) 和 PFD7）的后續(xù)產(chǎn)品。它的柵極電荷 (Qg) 比 CFD7 降低了 20%，關(guān)斷損耗 (Eoss) 比 CFD7 進(jìn)一步降低了 12%，反向恢復(fù)電荷 (Qrr) 與 CFD7 相比降低了 3%，并且具有市場(chǎng)上最低的反向恢復(fù)時(shí)間 (trr)。 ? 一流的 RDS(on)*A\n? 大幅減少損失\n? 出色的換向堅(jiān)固性\n? 集成快速體二極管\n? .XT 互連\n? ESD 保護(hù);

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MOSFET 600V CoolMOSa CM8 Power Transistor

Features ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Significant reduction of switching and conduction losses ? Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits ? Ease of use and fast design-in throug

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MOSFET 600V CoolMOSa CM8 Power Transistor

Features ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Significant reduction of switching and conduction losses ? Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits ? Ease of use and fast design-in throug

文件：1.15676 Mbytes 頁(yè)數(shù)：14 Pages

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MOSFET 600V CoolMOSa CM8 Power Transistor

Features ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Significant reduction of switching and conduction losses ? Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits ? Ease of use and fast design-in throug

文件：1.44402 Mbytes 頁(yè)數(shù)：14 Pages

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