CoolMOSTM Power Transistor

Features ? Lowest figure of merit RON x Qg ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Pb-free lead plating; RoHS compliant ? Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: ? Hard and softswitching SMPS topologies ? DC

文件：311.49 Kbytes 頁(yè)數(shù)：10 Pages

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英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Fast switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤399m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.67 Kbytes 頁(yè)數(shù)：2 Pages

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500 V-950 V CoolMOS? N 溝道功率 MOSFET

CoolMOS? CP 是英飛凌第五個(gè) CoolMOS? 系列產(chǎn)品，專(zhuān)門(mén)設(shè)計(jì)用于 ATX、筆記本適配器 PDP 和 LCD 電視的軟硬開(kāi)關(guān)拓?fù)?、CCM PFC 以及 PWM。\n ? ? 極低的 R on x Q g 品質(zhì)因數(shù)\n? 極低的柵極電荷\n? 極端 dv/dt 額定值\n? 極低的 R DS(on)，超低的柵極電壓，極快速開(kāi)關(guān)\n? V th 為 3 V，g fs 極高，內(nèi)部 R g 非常低\n? 高電流能力\n? 顯著減少傳導(dǎo)和開(kāi)關(guān)損耗\n? 高功率密度和效率，實(shí)現(xiàn)更高功率轉(zhuǎn)換系統(tǒng)\n? 出色性?xún)r(jià)/性能比\n\n優(yōu)勢(shì):;

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英飛凌

CoolMOSTM Power Transistor

Features ? Lowest figure of merit RON x Qg ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Pb-free lead plating; RoHS compliant ? Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: ? Hard and softswitching SMPS for server power

文件：244.15 Kbytes 頁(yè)數(shù)：10 Pages

INFINEON

英飛凌

isc N-Channel MOSFET Transistor

? DESCRITION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.399? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.25 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

CoolMOSTM Power Transistor

文件：280.23 Kbytes 頁(yè)數(shù)：10 Pages

INFINEON

英飛凌