isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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OptiMOS Power-Transistor

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INFINEON

英飛凌

30 V、N 溝道、最大 20 mΩ、汽車(chē) MOSFET、DPAK、OptiMOS ?

? N-channel - Enhancement mode\n? Automotive AEC Q101 qualified\n? MSL1 up to 260°C peak reflow\n? 175°C operating temperature\n? Green Package (RoHS compliant)\n? 100% Avalanche tested\n\n優(yōu)勢(shì):\n? Low switching and conduction power losses for highest thermal efficiency\n? Robust packages with sup;

Infineon

英飛凌

OptiMOS Power-Transistor Feature Enhancement mode Logic Level

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INFINEON

英飛凌

OptiMOS Power-Transistor

Feature ? N-Channel ? Enhancement mode ? Logic Level ? Excellent Gate Charge x RDS(on) product (FOM) ? Superior thermal resistance ? 175°C operating temperature ? Avalanche rated ? dv/dt rated ? Pb-free lead plating; RoHS compliant

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INFINEON

英飛凌

N-Channel 30-V (D-S) MOSFET

FEATURES ? TrenchFET? Power MOSFET ? 100 Rg and UIS Tested ? Compliant to RoHS Directive 2011/65/EU APPLICATIONS ? OR-ing ? Server ? DC/DC

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VBSEMI

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