絲?。?a target="_blank" title="Marking" href="/19dp10nm/marking.html">19DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.79585 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

普通級別的 P 溝道 MOSFET，降低中低功率應(yīng)用的設(shè)計(jì)復(fù)雜性

\n優(yōu)勢:\n? Industry standard package\n? Ideal for high and low switching frequency\n? Avalanche ruggedness\n? Easy interface to MCU\n? Improved efficiency at low loads due to low Qf\n? Reduced design complexity\n? Energy efficiency;

Infineon

英飛凌

OptiMOS Power-Transistor,-100V

Features *p-channel *100 avalanche tested *Nomal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.7856 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

TO-252

INFINEON

英飛凌

上傳：深圳市龍瀚電子有限公司

TO-252

INFINEON/英飛凌

上傳：深圳安世裕電子科技有限公司