絲?。?a target="_blank" title="Marking" href="/95r310d7/marking.html">95R310D7；Package：PG-TO263-3；MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

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采用 TO-263 封裝的 950 V CoolMOS ? PFD7 超結(jié) MOSFET

PFD7，專為實(shí)現(xiàn)超高功率密度和最高效率設(shè)計(jì)。這些產(chǎn)品主要用于 PFC 和 LLC/LCC 拓?fù)浣Y(jié)構(gòu)的消費(fèi)類和工業(yè)用開(kāi)關(guān)電源應(yīng)用。與 CoolMOS? C3 相比，950 V CoolMOS? PFD7 的 Qg 降低了 60%（從而降低了驅(qū)動(dòng)損耗、提高了輕載和滿載效率），還配備一個(gè)快速且堅(jiān)固的體二極管。 ? CoolMOS ? 7 系列\(zhòng)n? 低存儲(chǔ)能量 COSS\n? 經(jīng)過(guò)現(xiàn)場(chǎng)驗(yàn)證的 CoolMOS ?質(zhì)量\n? 自 1998 年以來(lái)的 CoolMOS ?;

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英飛凌

MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

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INFINEON

英飛凌

MOSFET 950V CoolMOSa PFD7 SJ Power Device

Features ? Integrated ultra-fast body diode ? Best-in-class reverse recovery charge Qrr ? Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated fast body diode ? Best-in-class CoolMOS? quality and relia

文件：1.12352 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌