首頁(yè) >IPB60R125C6>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPB60R125C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件:2.08463 Mbytes 頁(yè)數(shù):18 Pages | INFINEON 英飛凌 | INFINEON | |
IPB60R125C6 | 絲印:6R125C6;Package:PG-TO263;MOSFET Metal Oxide Semiconductor Field Effect Transistor Features * Extremely low losses due to very low FOM Rdson Qg and Eoss * Very high comutation ruggedness * Easy to ues/drive * JEDEC qualified, Pb-free plating, Halogen free 文件:1.26355 Mbytes 頁(yè)數(shù):18 Pages | INFINEON 英飛凌 | INFINEON | |
IPB60R125C6 | 絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor ? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications 文件:189.31 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
IPB60R125C6 | Metal Oxide Semiconductor Field Effect Transistor 文件:1.3131 Mbytes 頁(yè)數(shù):18 Pages | INFINEON 英飛凌 | INFINEON | |
IPB60R125C6 | 500V-900V CoolMOS? N-Channel Power MOSFET CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進(jìn)的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗(yàn)與其先進(jìn)的創(chuàng)新技術(shù)C6 器件具備了快速開(kāi)關(guān)超結(jié) MOSFET 的所有優(yōu)點(diǎn),同時(shí)又不犧牲易用性。很低的開(kāi)關(guān)和通態(tài)損耗使開(kāi)關(guān)應(yīng)用更高效,結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3 ? 易于控制開(kāi)關(guān)行為\n? 由于非常低的品質(zhì)因數(shù)(R DS(ON)*Q g)和E oss),因此損耗極低\n? 非常高的換流堅(jiān)固性\n? 使用簡(jiǎn)便\n? 與 C3 相比,具有更高的輕載效率\n? 出色的可靠性和經(jīng)過(guò)實(shí)踐驗(yàn)證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比,性價(jià)比更高\(yùn)n? 更高效、更緊湊、重量更輕、溫度更低\n\n\n優(yōu)勢(shì):\n?\n ? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開(kāi)關(guān)拓?fù)渲惺褂肻n? 提高輕載效率\n? 提高在硬開(kāi)關(guān)應(yīng)用中的效率\n? 改進(jìn)了易用性\n? 減輕可能因?yàn)?PCB 布局和封裝寄生效應(yīng)而引; | Infineon 英飛凌 | Infineon | |
Metal Oxide Semiconductor Field Effect Transistor 文件:1.3131 Mbytes 頁(yè)數(shù):18 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- Package?:
D2PAK (TO-263)
- VDS?max:
600.0V
- RDS (on)?max:
125.0m?
- Polarity?:
N
- ID ?max:
30.0A
- Ptot?max:
219.0W
- IDpuls?max:
89.0A
- VGS(th)?min?max:
2.5V?3.5V
- QG?:
96.0nC?
- Rth?:
0.57K/W?
- RthJC?max:
0.57K/W
- RthJA?max:
62.0K/W
- Operating Temperature?min:
-55.0°C?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2021+ |
9450 |
原裝現(xiàn)貨。 |
詢價(jià) | |||
英飛翎 |
17+ |
D2PAK(TO-263) |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
INFINEON/英飛凌 |
2025+ |
TO-263 |
56252 |
香港倉(cāng)現(xiàn)貨 貨期3天 |
詢價(jià) | ||
Infineon(英飛凌) |
25+ |
PG-TO263-3 |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。 |
詢價(jià) | ||
Infineon(英飛凌) |
25+ |
PG-TO263-3 |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。 |
詢價(jià) | ||
INFINEON |
1708+ |
D2PAK(TO-263) |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
ON |
18+ |
TO-263 |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢價(jià) | ||
INFINEON |
20+ |
D2PAK(TO-263) |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) |
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