絲?。?a target="_blank" title="Marking" href="/110n20lf/marking.html">110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features ? Ideal for hot-swap and e-fuse applications ? Very low on-resistance RDS(on) ? Wide safe operating area SOA ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Qualified according to JEDEC1) for target applications ? Halogen-free according to IEC6

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絲印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

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結(jié)合低 RDS(on) 與寬安全工作區(qū) (SOA)

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current\n\n優(yōu)勢:\n? Rugged linear mode operation\n? Low conduction losses\n? Higher in-rush current enabled for faster start-up and shorter down time;

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isc N-Channel MOSFET Transistor

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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC for target application ? Halogen-free according to IEC6124

文件：452.77 Kbytes 頁數(shù)：11 Pages

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OptiMOS 3 Power-Transistor

文件：739.46 Kbytes 頁數(shù)：11 Pages

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