絲印：048N15LF；Package：PG-TO263-3；OptiMOSTM 5 Linear FET, 150 V

文件：905.95 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

isc N-Channel MOSFET Transistor

文件：323.15 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

OptiMOSTM 5 Linear FET, 150 V

文件：905.95 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

結(jié)合低 RDS(on) 與寬安全工作區(qū) (SOA)

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current\n\n優(yōu)勢:\n? Rugged linear mode operation\n? Low conduction losses\n? Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飛凌