絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

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OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

文件：483.4 Kbytes 頁數(shù)：11 Pages

INFINEON

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N 溝道功率 MOSFET

OptiMOS? 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and f ? Excellent gate charge x R DS(on) product (FOM)\n? Very low on-resistance R DS(on)\n? Ideal for fast switching applications\n? RoHS compliant - halogen free\n? MSL1 rated\n\n優(yōu)勢:\n? Highest system efficiency\n? Less paralleling required\n? Increased power density\n? System cost reduction\n? Very low;

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