isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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絲印：95R450P7；Package：PG-TO220；950V CoolMOS? P7 SJ Power Device

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500 V-950 V CoolMOS? N 溝道功率 MOSFET

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS? P7 technology focuses on the low-power SMPS market.\n Offering 50V more blocking voltage than its predecessor 900V CoolMOS? C3, the 950V CoolMOS? P7 series delivers outstanding performance i ? Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss\n? Best-in-class DPAK RDS(on) of 450 mΩ\n? Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V\n? Integrated Zener diode ESD protection up to Class 2 (HBM)\n? Best-in-class quality and reliability\n\n優(yōu)勢:\n? Up to 1% effi;

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MOSFET 950V CoolMOSa P7 SJ Power Device

Features ? Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss ? Best-in-class DPAK RDS(on) ? Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V ? Integrated Zener Diode ESD protection ? Best-in-class CoolMOS? quality and reliability ? Fully optimized portfolio

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950V CoolMOS? P7 SJ Power Device

文件：1.39032 Mbytes 頁數(shù)：14 Pages

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