CoolMOS Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge CoolMOS? 900V is designed for: ? Quasi Resonant Flyback / Forward topologi

文件：271.85 Kbytes 頁數：10 Pages

INFINEON

英飛凌

500 V-950 V CoolMOS? N 溝道功率 MOSFET

Replacement for CoolMOS? C3 is CoolMOS? P7\n 900V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢:\n? High efficiency and power density\n? Outstanding cost/per;

Infineon

英飛凌

CoolMOS??Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge CoolMOS? 900V is designed for: ? Quasi Resonant Flyback / Forward topologi

文件：259.68 Kbytes 頁數：10 Pages

INFINEON

英飛凌

isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220 packaging ? High speed switching ? Low gate input resistance ? Standard level gate drive ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Power supply ? Switching applic

文件：246.87 Kbytes 頁數：2 Pages

ISC

無錫固電

CoolMOS??Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge CoolMOS? 900V is designed for: ? Quasi Resonant Flyback / Forward topologi

文件：292.08 Kbytes 頁數：10 Pages

INFINEON

英飛凌