CoolMOS Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge CoolMOS? 900V is designed for: ? Quasi Resonant Flyback / Forward topologi

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INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRIPTION ? High peak current capability ? Ultra low gate charge ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤1.2? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：339.52 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for CoolMOS? C3 is CoolMOS? P7\n 900V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢:\n? High efficiency and power density\n? Outstanding cost/per;

Infineon

英飛凌

CoolMOS Power Transistor

文件：303.44 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤1.2? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.43 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

CoolMOS? Power Transistor

Features ? Lowest figure-of-merit RON x Qg ? Extreme dv/dt rated ? High peak current capability ? Fully qualified according to JEDEC for Industrial Applications ? Pb-free lead plating; RoHS compliant,available in Halogen free mold compound ? Ultra low gate charge

文件：368.95 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌