首頁 >IPA60R190C6>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPA60R190C6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi 文件:2.20584 Mbytes 頁數(shù):19 Pages | INFINEON 英飛凌 | INFINEON | |
IPA60R190C6 | 絲印:6R190C6;Package:PG-TO220;600V CoolMOS C6 Power Transistor Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi 文件:1.22055 Mbytes 頁數(shù):19 Pages | INFINEON 英飛凌 | INFINEON | |
IPA60R190C6 | isc N-Channel MOSFET Transistor ? FEATURES ? With TO-220F packaging ? High speed switching ? Very high commutation ruggedness ? Easy to use ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operationz ? APPLICATIONS ? PFC stages, hard switching PWM stages and resonant s 文件:316.51 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IPA60R190C6 | Metal Oxide Semiconductor Field Effect Transistor 文件:1.27182 Mbytes 頁數(shù):19 Pages | INFINEON 英飛凌 | INFINEON | |
IPA60R190C6 | 500 V-950 V CoolMOS? N 溝道功率 MOSFET CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進的超結(jié)MOSFET供應商的相關(guān)經(jīng)驗與其先進的創(chuàng)新技術(shù)C6 器件具備了快速開關(guān)超結(jié) MOSFET 的所有優(yōu)點,同時又不犧牲易用性。很低的開關(guān)和通態(tài)損耗使開關(guān)應用更高效,結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3 ? 易于控制開關(guān)行為\n? 由于非常低的品質(zhì)因數(shù)(R DS(ON)*Q g)和E oss),因此損耗極低\n? 非常高的換流堅固性\n? 使用簡便\n? 與 C3 相比,具有更高的輕載效率\n? 出色的可靠性和經(jīng)過實踐驗證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比,性價比更高\n? 更高效、更緊湊、重量更輕、溫度更低\n\n\n優(yōu)勢:\n?\n ? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開關(guān)拓撲中使用\n? 提高輕載效率\n? 提高在硬開關(guān)應用中的效率\n? 改進了易用性\n? 減輕可能因為 PCB 布局和封裝寄生效應而引; | Infineon 英飛凌 | Infineon | |
Metal Oxide Semiconductor Field Effect Transistor 文件:1.27182 Mbytes 頁數(shù):19 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- Package?:
TO-220 FullPAK
- VDS?max:
600.0V
- RDS (on)?max:
190.0m?
- Polarity?:
N
- ID ?max:
20.2A
- Ptot?max:
34.0W
- IDpuls?max:
59.0A
- VGS(th)?min?max:
2.5V?3.5V
- QG?:
58.0nC?
- Rth?:
3.7K/W?
- RthJC?max:
3.7K/W
- RthJA?max:
80.0K/W
- Operating Temperature?min:
-55.0°C?
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
標準封裝 |
7098 |
原廠渠道供應,大量現(xiàn)貨,原型號開票。 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-220F |
32360 |
INFINEON/英飛凌全新特價IPA60R190C6即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
英飛凌 |
13+ |
TO-220F |
82 |
只做原裝正品 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INFINEON |
24+ |
TO-220F |
20000 |
原裝正品支持實單 |
詢價 | ||
VBsemi(微碧) |
24+ |
N/A |
28630 |
原裝正品現(xiàn)貨支持實單 |
詢價 | ||
INF |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
Infineon(英飛凌) |
25+ |
- |
18798 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價 | ||
Infineon |
17+ |
TO-220F |
6200 |
詢價 | |||
INFINEO |
25+ |
TO220 |
10 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
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