英飛凌對諧振高功率拓撲的回答

The 600V CoolMOS? CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS? 7 series. CoolMOS? CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare ? Ultra-fast body diode\n? Best-in-class reverse recovery charge (Qrr)\n? Improved reverse diode dv/dt and dif/dt ruggedness\n? Lowest FOM RDS(on) x Qg and Eoss\n? Best-in-class RDS(on)/package combinations\n\n優(yōu)勢:\n? Best-in-class hard commutation ruggedness\n? Highest reliability for resonant topol;

Infineon

英飛凌

絲印：60R125F7；Package：PG-TO220FullPAK；600V CoolMOS? CFD7 Power Transistor

文件：1.13347 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Transistor

文件：1.24462 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS??CFD7 Power Transistor

文件：1.03048 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

600V CoolMOS? CFD7 Power Transistor

文件：1.69832 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌