N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 26A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.12Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

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絲?。?a target="_blank" title="Marking" href="/60r120p7/marking.html">60R120P7；Package：PG-TO220FullPAK；600V CoolMOS? P7 Power Transistor

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isc N-Channel MOSFET Transistor

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優(yōu)化的超結(jié) MOSFET，兼具高能效和易用性

The?600V CoolMOS? P7 superjunction MOSFET is the successor to the 600V CoolMOS? P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS? 7th generation platform ensur Efficiency\n ? 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n ? Integrated ESD diode from 180mN and above RDS(on)s\n? Integrated gate resistor RG\n? Rugged body diode\n? Wide portfolio in through hole and surface mount packages\n? Both standard grade and industrial grade pa;

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包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET N-CH 600V TO220FP-3

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