PROGRAMMABLE PRECISION REFERENCE

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SEME-LAB

參考基準(zhǔn)

TT Electronics

N-CHANNEL POWER MOSFETS

FEATURES ? Low RDs(on) at high voltage ? Improved inductive ruggedness ? Excellent high voltage stability ? Fast switching times ? Rugged polysilicon gate cell structure ? Low input capactiance ? Extended safe operating area ? Improved high temperature reliablitiy ? TO-3 package (High vol

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SAMSUNG

三星

N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

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FAIRCHILD

仙童半導(dǎo)體

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ? VGS Rated at ± 20V ? Silicon Gate for Fast Switchi

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司