NTMFS0D4N04XMT1G MOSFET Power MOSFET 規(guī)格書
NTMFS0D4N04XMT1G 封裝:DFN-5,產(chǎn)品種類: MOSFET 技術(shù): Si 安裝風(fēng)格: SMD/SMT 封裝 / 箱體: DFN-5 晶體管極性: N-Channel 通道數(shù)量: 1 Channel Vds-漏源極擊穿電壓: 40 V Id-連續(xù)漏極電流: 509 A Rds On-漏源導(dǎo)通電阻: 420 uOhms Vgs - 柵極-源極電壓: - 20 V, + 20 V Vgs th-柵源極閾值電壓: 3.5 V Qg-柵極電荷: 133 nC



















