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    INA818ID
    絲印：INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818ID.B
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818IDR
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818IDR.B
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818IDRG4
    絲印：INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818IDRG4.B
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818ID
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818ID.B
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818IDR
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    INA818IDR.B
    絲?。?strong>INA818；Package：SOIC(D)；INA818 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
    
1 Features
1? Low offset voltage: 10 μV (typ), 35 μV (max)
? Gain drift: 5 ppm/°C (G = 1),
35 ppm/°C (G > 1) (max)
? Noise: 8 nV/√Hz
? Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
? Stable with 1-nF capacitive loads
? Inputs protected up to ±60 V
? Common-mode rejection: 110 dB, G = 10 (min
    文件：1.37193 Mbytes 頁數(shù)：43 Pages
    TI
    德州儀器
    

    
            
    
		
    
            
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            更新時(shí)間2026-1-21 15:16:00
        
    
        
    
          
    
            
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