絲?。?a target="_blank" title="Marking" href="/12m1h220/marking.html">12M1H220；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

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絲印：12M1H350；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.37219 Mbytes 頁數(shù)：17 Pages

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CoolSiC? 1200V SiC Trench MOSFET in TO247-4 package

The?CoolSiC??1200 V, 45 mΩ SiC MOSFET?in TO247-4 package build on a state-of-the-art trench?semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These in ? Best in class switching and conduction losses\n? Benchmark high threshold voltage, Vth > 4 V\n? Short-circuit robustness, 3 μs\n? Robust and low loss body diode rated for hard commutation\n? IGBT-compatible gate driving, +15V for turn-on\n? Driver source pin for optimized switching performance\n\n;

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CoolSiC ? 1200V SiC 溝槽MOSFET，采用TO247-4封裝

The?CoolSiC??1200 V, 60 mΩ?SiC MOSFET?in TO247-4 package build on a state-of-the-art trench?semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These in ? Best in class switching and conduction losses\n? Benchmark high threshold voltage, Vth > 4 V\n? 0V turn-off gate voltage for easy and simple gate drive\n? Wide gate-source voltage range\n? Robust and low loss body diode rated for hard commutation\n? Temperature independent turn-off switching losse;

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CoolSiC ? 1200V SiC 溝槽MOSFET，采用TO247-4封裝

The?CoolSiC??1200 V, 90 mΩ?SiC MOSFET?in TO247-4 package build on a state-of-the-art trench?semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These in ? Best in class switching and conduction losses\n? Benchmark high threshold voltage, Vth > 4 V\n? 0V turn-off gate voltage for easy and simple gate drive\n? Wide gate-source voltage range\n? Robust and low loss body diode rated for hard commutation\n? Temperature independent turn-off switching losse;

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