絲印：65R140D2；Package：PG-LSON-8；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.06747 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

CoolGaN ?晶體管 650 V G5

? 650 V e-mode power transistor\n? Ultrafast switching\n? No reverse-recovery charge\n? Capable of reverse conduction\n? Low gate charge, low output charge\n? Superior commutation ruggedness\n? Low dynamic RDS(on)\n? High ESD robustness: 2 kV HBM - 1 kV CDM\n? Bottom-side cooled package\n? JEDEC qua;

Infineon

英飛凌

CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.07413 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.45126 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌