| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>IDW；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability 文件：204.1 Kbytes 頁數(shù)：5 Pages | SUNMATE 森美特 | SUNMATE | ||
絲?。?a target="_blank" title="Marking" href="/d100e60/marking.html">D100E60；Package：PG-TO247-3；Fast Switching Emitter Controlled Diode Features: ? 600V Emitter Controlled technology ? Fast recovery ? Soft switching ? Low reverse recovery charge ? Low forward voltage ? 175°C junction operating temperature ? Easy paralleling ? Pb-free lead plating; RoHS compliant ? Complete product spectrum and PSpice Models: http://www.in 文件：302.47 Kbytes 頁數(shù)：7 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d100e60/marking.html">D100E60；Package：PG-TO-247-3；Fast Switching EmCon Diode Features: ? 600 V EmCon technology ? Fast recovery ? Soft switching ? Low reverse recovery charge ? Low forward voltage ? 175 °C junction operating temperature ? Easy paralleling ? Pb-free lead plating; RoHS compliant ? Complete product spectrum and PSpice Models: http://www.infineon.com 文件：188.56 Kbytes 頁數(shù)：7 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d1065c5/marking.html">D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode 1 Description Features ? Revolutionary semiconductor material - Silicon Carbide ? Benchmark switching behavior ? No reverse recovery/ No forward recovery ? Temperature independent switching behavior ? High surge current capability ? Pb-free lead plating; RoHS compliant ? Qualified accordin 文件：1.1747 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/c20ed2/marking.html">C20ED2；Package：PG-TO247-3；Emitter Controlled Diode Rapid 2 Common Cathode Series Features: ?QualifiedaccordingtoJEDECfortargetapplications ?650VEmitterControlledtechnology ?Fastrecovery ?Softswitching ?Lowreverserecoverycharge(Qrr) ?Lowforwardvoltage(VF)andstableovertemperature ?175°Cjunctionoperatingtemperature ?Easyparalleling ?Pb-freeleadplating ?RoHScompliant 文件：1.58275 Mbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/c20ed2/marking.html">C20ED2；Package：PG-TO247-3；EmitterControlledDiodeRapid2CommonCathodeSeries Features: ?QualifiedaccordingtoJEDECfortargetapplications ?650VEmitterControlledtechnology ?Fastrecovery ?Softswitching ?Lowreverserecoverycharge(Qrr) ?Lowforwardvoltage(VF)andstableovertemperature ?175°Cjunctionoperatingtemperature ?Easyparalleling ?Pb-freeleadplating ?RoHScompliant 文件：1.58238 Mbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d2065c5/marking.html">D2065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode 1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm 文件：1.1743 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/c30ed1/marking.html">C30ED1；Package：PG-TO247-3；Emitter Controlled Diode Rapid 1 Common Cathode Series Features: ?QualifiedaccordingtoJEDECfortargetapplications ?650VEmitterControlledtechnology ?Temperaturestablebehaviourofkeyparameters ?Lowforwardvoltage(VF) ?Ultrafastrecovery ?Lowreverserecoverycharge(Qrr) ?Lowreverserecoverycurrent(Irrm) ?175°Cjunctionoperatingtemperature ?Pb-freeleadpl 文件：1.62764 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d3065c5/marking.html">D3065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode 1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therma 文件：1.17544 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/d4065c5/marking.html">D4065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode 1 Description ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm 文件：1.17583 Mbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON |
詳細參數(shù)
- 型號：
IDW
- 功能描述：
TVS 二極管 - 瞬態(tài)電壓抑制器 TVS Diode SMC Suf MT
- RoHS：
否
- 制造商：
Vishay Semiconductors
- 極性：
Bidirectional
- 擊穿電壓：
58.9 V
- 鉗位電壓：
77.4 V
- 峰值浪涌電流：
38.8 A
- 封裝/箱體：
DO-214AB
- 最小工作溫度：
- 55 C
- 最大工作溫度：
+ 150 C
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
64000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
CCD |
09+ |
DO-214AB |
64300 |
絕對全新原裝強調只做全新原裝現(xiàn) |
詢價 | ||
SUNMATE(森美特) |
2019+ROHS |
SMC(DO-214AB) |
66688 |
森美特高品質產品原裝正品免費送樣 |
詢價 | ||
LITTELFUS |
24+ |
DO-214ABSMC |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
Littelfuse |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
BrightKing |
18+ |
DO-214 |
10000 |
正品原裝,全新貨源,可長期訂貨 |
詢價 | ||
Brightking/君耀 |
19+ |
SMCDO-214AB |
200000 |
詢價 | |||
LITTELFUSE/力特 |
20+ |
DO-214ABSMC |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
VISHAY/威世 |
23+ |
SMC |
24190 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
BRIGHTKING/君耀 |
2447 |
7.116.22MM(Max) |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
相關芯片絲印
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相關庫存
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- TPS7A0228DQNR
- TPS7A0228DQNR
- SMAJ12A
- WL2836D12-4SLASHTR
- SMDJ12C
- 4.0SMDJ12CA
- SMDJ12CA
- SMDJ13C
- 4.0SMDJ13CA
- SMDJ13CA
- SMDJ14C
- SMDJ14CA
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- SMLJ17CA-Q
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- SMLJ18CA-Q
- SMDJ20CA
- 4.0SMDJ20CA
- SMLJ20CA-Q
- 4.0SMDJ22CA
- SMLJ22CA
- SMLJ22CA-Q
- SMDJ24CA
- SMLJ24CA
- SMLJ24CA-Q
