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          首頁(yè) >ICP>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          ICP1240-1-501U

          6-18GHz 10W GaN PA MMIC

          Description ICONICRF’s ICP1240 is a 3 stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1240 operates from 6-18GHz with 41 dBm output power, >18 PAE and 23dB typical small signal gain. ICP1240 is well suited to a variety of commercial, aerospace and defense a

          文件:937.84 Kbytes 頁(yè)數(shù):17 Pages

          MICROCHIP

          微芯科技

          ICP1543

          12-18GHz 20W GaN PA MMIC

          Description ICONICRF’s ICP1543 is a three stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1543 operates from 12-18GHz with 43dBm output power, >30 PAE and 22dB small signal gain. ICP1543 is well suited to a variety of Test and Measurement and Aerospace & De

          文件:1.02053 Mbytes 頁(yè)數(shù):20 Pages

          MICROCHIP

          微芯科技

          ICP1543-1-110I

          12-18GHz 20W GaN PA MMIC

          Description ICONICRF’s ICP1543 is a three stage MMIC power amplifier in bare die form, fabricated using GaN on SiC technology. ICP1543 operates from 12-18GHz with 43dBm output power, >30 PAE and 22dB small signal gain. ICP1543 is well suited to a variety of Test and Measurement and Aerospace & De

          文件:1.02053 Mbytes 頁(yè)數(shù):20 Pages

          MICROCHIP

          微芯科技

          ICP2840

          27.5 – 31 GHz 9W GaN PA MMIC

          Key Features ? Frequency range: 27.5 – 31 GHz ? Pout: 39.5 dBm (Pin = 24 dBm) ? PAE: 22 (Pin = 24 dBm) ? Small Signal Gain: 22 dB (28 GHz) ? Return Loss: 15 dB ? Drain Bias 24V, IDQ = 112 mA – 224 mA ? Technology: GaN on SiC ? Lead-free and RoHS compliant ? Dimensions: 3.025 mm × 3.405 mm

          文件:787.2 Kbytes 頁(yè)數(shù):21 Pages

          MICROCHIP

          微芯科技

          ICP2840-1-100I

          27.5 – 31 GHz 9W GaN PA MMIC

          Key Features ? Frequency range: 27.5 – 31 GHz ? Pout: 39.5 dBm (Pin = 24 dBm) ? PAE: 22 (Pin = 24 dBm) ? Small Signal Gain: 22 dB (28 GHz) ? Return Loss: 15 dB ? Drain Bias 24V, IDQ = 112 mA – 224 mA ? Technology: GaN on SiC ? Lead-free and RoHS compliant ? Dimensions: 3.025 mm × 3.405 mm

          文件:787.2 Kbytes 頁(yè)數(shù):21 Pages

          MICROCHIP

          微芯科技

          ICP2840-1-110I

          27.5 – 31 GHz 9W GaN PA MMIC

          Key Features ? Frequency range: 27.5 – 31 GHz ? Pout: 39.5 dBm (Pin = 24 dBm) ? PAE: 22 (Pin = 24 dBm) ? Small Signal Gain: 22 dB (28 GHz) ? Return Loss: 15 dB ? Drain Bias 24V, IDQ = 112 mA – 224 mA ? Technology: GaN on SiC ? Lead-free and RoHS compliant ? Dimensions: 3.025 mm × 3.405 mm

          文件:787.2 Kbytes 頁(yè)數(shù):21 Pages

          MICROCHIP

          微芯科技

          ICPL0452

          DESCRIPTION

          DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitud

          文件:547.49 Kbytes 頁(yè)數(shù):10 Pages

          ISOCOM

          英國(guó)安數(shù)光

          ICPL0453

          DESCRIPTION

          DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitud

          文件:547.49 Kbytes 頁(yè)數(shù):10 Pages

          ISOCOM

          英國(guó)安數(shù)光

          ICPL0453SMT-R

          ICPL0452 / ICPL0453 / ICPL0500 / ICPL0501

          DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitud

          文件:547.49 Kbytes 頁(yè)數(shù):10 Pages

          ISOCOM

          英國(guó)安數(shù)光

          ICPL0500

          DESCRIPTION

          DESCRIPTION The ICPL0452, ICPL0453, ICPL0500 and ICPL0501 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitud

          文件:547.49 Kbytes 頁(yè)數(shù):10 Pages

          ISOCOM

          英國(guó)安數(shù)光

          技術(shù)參數(shù)

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          更多ICP供應(yīng)商 更新時(shí)間2026-1-21 9:31:00
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