絲?。?strong>I6；Package：X2SON；TPS7A05 1-μA Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

1 Features 1? Ultralow IQ: 1 μA (typ), 3 μA (max) – IGND: 6 μA (typ) at 200 mA ? Excellent transient response ? Packages: – 1.0-mm × 1.0-mm X2SON (4) – 0.65-mm × 0.65-mm DSBGA (4) – SOT-23 (5) – SOT-23 (3) ? Input voltage range: 1.4 V to 5.5 V ? Output accuracy: 1% typical, 3% ma

文件：3.71576 Mbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?strong>I6；Package：X2SON；TPS7A05 1-關(guān)A Ultralow IQ, 200-mA, Low-Dropout Regulator in a Small-Size Package

文件：4.22821 Mbytes 頁數(shù)：55 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/i630/marking.html">I630；Package：TO-251；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 頁數(shù)：11 Pages

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東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i68a04/marking.html">I68A04；Package：PG-TLGA-4-2；High performance analog XENSIV? MEMS microphone

Features ? Surface mount package: 3.35mm x 2.5mm x 0.98mm ? Analog single-ended output ? Flat frequency response with low-frequency roll-off at 10Hz ? Acoustic overload point at 130dBSPL ? Signal-to-noise ratio of 68dB(A) SNR ? Narrow sensitivity and phase tolerances ? Omnidirectional picku

文件：1.35844 Mbytes 頁數(shù)：16 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/i600a/marking.html">I600A；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features ? Ultra-high input impedance: >1MΩ ? Supply range: 2.7V (±1.35V) to 40V (±20V) ? Input voltage range: (V–) – 40V to (V–) + 85V ? Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) ?

文件：2.76508 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/i600b/marking.html">I600B；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features ? Ultra-high input impedance: >1MΩ ? Supply range: 2.7V (±1.35V) to 40V (±20V) ? Input voltage range: (V–) – 40V to (V–) + 85V ? Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) ?

文件：2.76508 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/i600f/marking.html">I600F；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features ? Ultra-high input impedance: >1MΩ ? Supply range: 2.7V (±1.35V) to 40V (±20V) ? Input voltage range: (V–) – 40V to (V–) + 85V ? Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) ?

文件：2.76508 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/i60n10/marking.html">I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.67 Kbytes 頁數(shù)：10 Pages

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東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i60n10/marking.html">I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.31 Kbytes 頁數(shù)：10 Pages

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東海半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/i60n10/marking.html">I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：713.52 Kbytes 頁數(shù)：10 Pages

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東海半導(dǎo)體