絲?。?strong>HX6；Package：TSOT26；20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For auto

文件：677.23 Kbytes 頁數(shù)：10 Pages

DIODES

美臺半導體

絲?。?strong>HX6；Package：TSOT26；20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For auto

文件：677.23 Kbytes 頁數(shù)：10 Pages

DIODES

美臺半導體

HX6101NLT 1GPP, 1:1, 4PPOE, 音頻變壓器

電感 350 uH 數(shù)據(jù)速率 1000BASE-T 隔離電壓 1500 VAC 匝數(shù)比 1CT:1CT 端口數(shù) 雙 最小工作溫度 -40°C 最大工作溫度 +85°C 頻率范圍 1 MHz to 100 MHz 安裝風格 SMD/SMT 長 27.81 mm 寬 12.19 mm 高 7.24 mm

文件：321.286 Kbytes 頁數(shù)：10 Pages

PULSE

PDF上傳者：深圳市勤思達科技有限公司

Dual 1Gigabit Slimline Magnetic Modules

● Fully RoHS and Halogen Free ● Designed to exceed IEEE802.3au over Industrial temperature range -40 to +85°C ● Up to 35W PoE over 100m of UTP using 4pair connection ● Compatible with all Major PHYs ● 30% PCB saving compared to standard dual port devices

文件：486.13 Kbytes 頁數(shù)：3 Pages

PULSE

Dual 1Gigabit Slimline Magnetic Modules

● Fully RoHS and Halogen Free ● Designed to exceed IEEE802.3au over Industrial temperature range -40 to +85°C ● Up to 35W PoE over 100m of UTP using 4pair connection ● Compatible with all Major PHYs ● 30% PCB saving compared to standard dual port devices

文件：486.13 Kbytes 頁數(shù)：3 Pages

PULSE

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 頁數(shù)：12 Pages

HONEYWELL

霍尼韋爾

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 頁數(shù)：12 Pages

HONEYWELL

霍尼韋爾

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 頁數(shù)：12 Pages

HONEYWELL

霍尼韋爾

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 頁數(shù)：12 Pages

HONEYWELL

霍尼韋爾

128K x 8 STATIC RAM-SOI HX6228

GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation en

文件：153.48 Kbytes 頁數(shù)：12 Pages

HONEYWELL

霍尼韋爾