1K/2K 2-Wire CMOS Serial EEPROM

General Description The HT24LC01/02 is a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applicat

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CMOS 2K 2-Wire Serial EEPROM

General Description The HT24LC01/02 is a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applicat

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CMOS 2K 2-Wire Serial EEPROM

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CMOS 2K 2-Wire Serial EEPROM

(8TSSOP Package 限用產(chǎn)品 公告日 : 2018/05/02 生效日 : 2018/08/02)(8TSSOP Package 產(chǎn)品終止訊息)(8DIP Package 限用產(chǎn)品 公告日 : 2023/07/25 生效日 : 2023/10/25)The HT24LC02 is a 2K-bit serial read/write nonvolatile memory device using the CMOS floating gate process. Its 2048 bits of memory are organized into 256 words and each ? Operating voltage:\n? Low power consumption\n? Internal organization: 256x8\n? Write cycle time: 5ms max.\n? Partial page write allowed\n? Write operation with built-in timer\n? 40-year data retention\n? 8-pin DIP/SOP?package;

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CMOS 2K 2-Wire Serial EEPROM

文件：134.01 Kbytes 頁(yè)數(shù)：14 Pages

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CMOS 2K 2-Wire Serial EEPROM

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CMOS 2K 2-Wire Serial EEPROM

文件：123.17 Kbytes 頁(yè)數(shù)：11 Pages

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CMOS 2K 2-Wire Serial EEPROM

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CMOS 2K 2-Wire Serial EEPROM

The HT24LC02A is a 2K-bit serial read/write nonvolatile memory device using the CMOS floating gate process. Its 2048 bits of memory are organized into 256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applications where low power and low voltage ope ? Operating voltage:\n? Low power consumption\n? Internal organization: 256x8\n? Write cycle time: 5ms max.\n? Partial page write allowed\n? Write operation with built-in timer\n? 40-year data retention\n? Package Types: 8SOP and SOT23-5;

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