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          首頁 >HSD4M64B4>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          HSD4M64B4

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          HANBIT

          HSD4M64B4-10

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4-10L

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4-13N

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4-8

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4-F10

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4-F10L

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4-F8

          Synchronous DRAM Module 32Mbyte (4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4 is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the print

          文件:87.77 Kbytes 頁數(shù):11 Pages

          HANBIT

          HSD4M64B4W

          Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V

          GENERAL DESCRIPTION The HSD4M64B4W is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed

          文件:81.96 Kbytes 頁數(shù):10 Pages

          HANBIT

          詳細(xì)參數(shù)

          • 型號(hào):

            HSD4M64B4

          • 制造商:

            HANBIT

          • 制造商全稱:

            Hanbit Electronics Co.,Ltd

          • 功能描述:

            Synchronous DRAM Module 32Mbyte(4Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          24+
          N/A
          46000
          一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          TDK-LAMBD
          24+
          DIP
          500
          TDK-LAMBDA電源專營(yíng)現(xiàn)貨原裝正品專營(yíng)
          詢價(jià)
          TELEDYNE
          20+
          原裝
          67500
          原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
          詢價(jià)
          TELEDYNE
          23+
          10000
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          HUASHUO(華朔)
          2447
          TO-251
          105000
          70個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
          詢價(jià)
          AMPHENOL/安費(fèi)諾
          24+
          7112
          原廠現(xiàn)貨渠道
          詢價(jià)
          AMPHENOL/安費(fèi)諾
          2508+
          /
          209858
          一級(jí)代理,原裝現(xiàn)貨
          詢價(jià)
          臺(tái)灣華昕
          24+
          TO-126
          12500
          詢價(jià)
          華昕
          2022+
          TO-126
          5000
          原廠代理 終端免費(fèi)提供樣品
          詢價(jià)
          華晰
          TO-126
          68500
          一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
          詢價(jià)
          更多HSD4M64B4供應(yīng)商 更新時(shí)間2026-1-21 11:06:00
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