Radiation Hardened 8K x 8 SOS CMOS Static RAM

Description The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizi

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INTERSIL

Radiation Hardened 8K x 8 SOS CMOS Static RAM

Description The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizi

文件：110.83 Kbytes 頁數(shù)：16 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

文件：94.36 Kbytes 頁數(shù)：3 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

文件：128.419 Kbytes 頁數(shù)：14 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

文件：128.419 Kbytes 頁數(shù)：14 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

文件：128.419 Kbytes 頁數(shù)：14 Pages

INTERSIL

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

文件：94.36 Kbytes 頁數(shù)：3 Pages

INTERSIL

Radiation Hardened 8kx8 CMOS PROM

The Intersil HS-6664RH is a radiation hardened 64k CMOS PROM, organized in an 8k word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation. Features

文件：258.36 Kbytes 頁數(shù)：5 Pages

INTERSIL

Radiation Hardened 8kx8 CMOS PROM

The Intersil HS-6664RH is a radiation hardened 64k CMOS PROM, organized in an 8k word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation. Features

文件：258.36 Kbytes 頁數(shù)：5 Pages

INTERSIL

Radiation Hardened 16-Bit CMOS Microprocessor

The Intersil HS-80C86RH high performance radiation hardened 16-bit CMOS CPU is manufactured using a hardened field, self aligned silicon gate CMOS process. Two modes of operation, MINimum for small systems and MAXimum for larger applications such as multiprocessing, allow user configuration to ach

文件：239.92 Kbytes 頁數(shù)：37 Pages

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