控制MCU

HS6635CS是一款內(nèi)置了PIR信號處理電路的MCU。PIR信號處理電路包含一個16位ADC專門轉(zhuǎn)換PIR微弱的感應(yīng)信號；同時包含一個0.4Hz~7Hz的數(shù)字帶通濾波器，有效地處理ADC轉(zhuǎn)換出來的數(shù)字信號；內(nèi)置一個7位SAR型ADC，用戶可以根據(jù)實際應(yīng)用適當(dāng)配置使用。內(nèi)置MCU資源豐富，包括中斷、定時器、PWM輸出等。 ◆ 除了跳轉(zhuǎn)指令2個指令周期外，其他指令都是一個指令周期\n◆ 2K片內(nèi)ROM\n◆ 可直接、間接尋址\n◆ 2個16位定時器：\n TC0：外部事件計數(shù)器/PWM0/ Buzzer輸出；\n TC1：外部事件計數(shù)器/PWM1/ Buzzer輸出； \n◆ 內(nèi)置POR、BOR\n◆ 內(nèi)置上電復(fù)位時間PWRT和振蕩器起振時間OSCT\n◆ 內(nèi)置WDT看門狗\n◆ 內(nèi)置可校準(zhǔn) IHRC振蕩器\n◆ 內(nèi)置可校準(zhǔn) ILRC振蕩器\n◆ 一個安全位（代碼寄存器中）保護(hù)程序不被讀出\n◆ 384個RAM\n◆ 內(nèi)置I2C通訊協(xié)議\n◆ 3組標(biāo)準(zhǔn)雙向I;

H-SUN

華芯微電子

DirectFET Power MOSFET

Description The IRF6635 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geo

文件：247.22 Kbytes 頁數(shù)：9 Pages

IRF

DirectFET Power MOSFET

Description The IRF6635PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：242.78 Kbytes 頁數(shù)：9 Pages

IRF

Compatible with existing Surface Mount Techniques

Description The IRF6635PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：253.58 Kbytes 頁數(shù)：10 Pages

IRF