4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 μm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

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HITACHIHitachi Semiconductor

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4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

文件：84.98 Kbytes 頁數：18 Pages

HITACHIHitachi Semiconductor

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4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

文件：84.98 Kbytes 頁數：18 Pages

HITACHIHitachi Semiconductor

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4 M SRAM (512-kword ? 8-bit)

Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi

文件：109.67 Kbytes 頁數：19 Pages

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瑞薩

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil

文件：84.31 Kbytes 頁數：17 Pages

HITACHIHitachi Semiconductor

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Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po

文件：83.64 Kbytes 頁數：17 Pages

HITACHIHitachi Semiconductor

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Wide Temperature Range Version 4 M SRAM (512-kword ? 8-bit)

Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power

文件：109.35 Kbytes 頁數：19 Pages

RENESAS

瑞薩

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil

文件：84.31 Kbytes 頁數：17 Pages

HITACHIHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword ? 8-bit)

Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi

文件：109.67 Kbytes 頁數：19 Pages

RENESAS

瑞薩

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil

文件：84.31 Kbytes 頁數：17 Pages

HITACHIHitachi Semiconductor

日立日立公司