4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application wh

文件：64.22 Kbytes 頁數(shù)：13 Pages

HITACHIHitachi Semiconductor

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4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application wh

文件：64.22 Kbytes 頁數(shù)：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application whi

文件：75.3 Kbytes 頁數(shù)：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application whi

文件：75.3 Kbytes 頁數(shù)：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application whi

文件：75.3 Kbytes 頁數(shù)：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 μm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 頁數(shù)：18 Pages

HITACHIHitachi Semiconductor

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4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 μm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 頁數(shù)：18 Pages

HITACHIHitachi Semiconductor

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524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

文件：509.91 Kbytes 頁數(shù)：17 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 μm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 頁數(shù)：18 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 μm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：552.92 Kbytes 頁數(shù)：18 Pages

HITACHIHitachi Semiconductor

日立日立公司