4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the applicatio

文件：102.82 Kbytes 頁數(shù)：17 Pages

HITACHIHitachi Semiconductor

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4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the applicatio

文件：102.82 Kbytes 頁數(shù)：17 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the applicatio

文件：102.82 Kbytes 頁數(shù)：17 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application

文件：90.09 Kbytes 頁數(shù)：16 Pages

HITACHIHitachi Semiconductor

日立日立公司

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application

文件：90.09 Kbytes 頁數(shù)：16 Pages

HITACHIHitachi Semiconductor

日立日立公司

Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit)

文件：98.22 Kbytes 頁數(shù)：18 Pages

RENESAS

瑞薩

Wide Temperature Range Version 8 M SRAM (512-kword ? 16-bit)

文件：121.95 Kbytes 頁數(shù)：20 Pages

RENESAS

瑞薩

Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit)

文件：98.22 Kbytes 頁數(shù)：18 Pages

RENESAS

瑞薩

Memory>Fast SRAM>Asynchronous SRAM

Renesas

瑞薩

4M High Speed SRAM (256-kword x 16-bit)

HITACHI

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