絲印：D60P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：730.25 Kbytes 頁數(shù)：5 Pages

KERSEMI

絲?。?a target="_blank" title="Marking" href="/d60p03/marking.html">D60P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

文件：896.46 Kbytes 頁數(shù)：5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

匯利達廣東匯利達半導(dǎo)體有限公司

-30V P-Channel Enhancement Mode MOSFET

文件：1.59007 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-3A RDS(ON)

文件：661.21 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-3A RDS(ON)

文件：358.87 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能