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                >HL6>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          HL602
          INFRARED EMITTING DIODE
          
Infrared Light Emitting Diode (GaAlAs) INFRARED EMITTING DIODE
The HL602,850nm GaAlAs IRED mounted in a COB package with epoxy-lens. The HL602 has narrow beam angle, and is able to solder in the backside of PC board.
FEATURES
● Compact,COB package with epoxy-lens
● Narrow beam angle (= ± 5° )

          文件：239.93 Kbytes 頁數(shù)：1 Pages
          KODENSHI
          可天士
          

          HL6331G
          Low Operating Current Visible Laser Diode
          
Description
The HL6331G/32G are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
?  Visible light output: λp = 635 nm Typ
?  Single longitudina
          文件：95.92 Kbytes 頁數(shù)：4 Pages
          OPNEXT
          

          HL6331G
          Low Operating Current Visible Laser Diode
          
Description
The HL6331G/32G are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW)
structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
?  Visible light output : 635 nm Typ
?  Optical output power 
          文件：36.66 Kbytes 頁數(shù)：8 Pages
          HITACHIHitachi Semiconductor
          日立日立公司
          

          HL6332G
          Low Operating Current Visible Laser Diode
          
Description
The HL6331G/32G are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
?  Visible light output: λp = 635 nm Typ
?  Single longitudina
          文件：95.92 Kbytes 頁數(shù)：4 Pages
          OPNEXT
          

          HL6332G
          Low Operating Current Visible Laser Diode
          
Description
The HL6331G/32G are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW)
structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
?  Visible light output : 635 nm Typ
?  Optical output power 
          文件：36.66 Kbytes 頁數(shù)：8 Pages
          HITACHIHitachi Semiconductor
          日立日立公司
          

          HL6333MG
          Low Operating Current Visible Laser Diode
          
Description
The HL6333MG/34MG are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
? Visible light output : 635 nm Typ
? Optical output power :
          文件：36.44 Kbytes 頁數(shù)：8 Pages
          HITACHIHitachi Semiconductor
          日立日立公司
          

          HL6333MG
          Low Operating Current Visible Laser Diode
          
Description
The HL6333MG/34MG are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure.
They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
? Visible light output: λp = 635 nm Typ
? Single longitudin
          文件：95.13 Kbytes 頁數(shù)：4 Pages
          OPNEXT
          

          HL6334MG
          Low Operating Current Visible Laser Diode
          
Description
The HL6333MG/34MG are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
? Visible light output : 635 nm Typ
? Optical output power :
          文件：36.44 Kbytes 頁數(shù)：8 Pages
          HITACHIHitachi Semiconductor
          日立日立公司
          

          HL6334MG
          Low Operating Current Visible Laser Diode
          
Description
The HL6333MG/34MG are 0.63 μm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure.
They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
? Visible light output: λp = 635 nm Typ
? Single longitudin
          文件：95.13 Kbytes 頁數(shù)：4 Pages
          OPNEXT
          

          HL6339G
          633nm Lasing Laser Diode
          
Description
The HL6339G/42G is 0.63 μm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurem
          文件：44.5 Kbytes 頁數(shù)：8 Pages
          HITACHIHitachi Semiconductor
          日立日立公司
          

          
            
          
		
        
          
            
          
                
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