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                >HEF4720V>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    HEF4720V
    256-bit, 1-bit per word random access memories
    
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type
    文件：180.05 Kbytes 頁數(shù)：16 Pages
    PHI
    PHI
    PHI
    

    HEF4720VD
    256-bit, 1-bit per word random access memories
    
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type
    文件：180.05 Kbytes 頁數(shù)：16 Pages
    PHI
    PHI
    PHI
    

    HEF4720VF
    256-bit, 1-bit per word random access memories
    
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type
    文件：180.05 Kbytes 頁數(shù)：16 Pages
    PHI
    PHI
    PHI
    

    HEF4720VN
    256-bit, 1-bit per word random access memories
    
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type
    文件：180.05 Kbytes 頁數(shù)：16 Pages
    PHI
    PHI
    PHI
    

    HEF4720VP
    256-bit, 1-bit per word random access memories
    
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type
    文件：180.05 Kbytes 頁數(shù)：16 Pages
    PHI
    PHI
    PHI
    

    HEF4720VT
    256-bit, 1-bit per word random access memories
    
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type
    文件：180.05 Kbytes 頁數(shù)：16 Pages
    PHI
    PHI
    PHI
    

    
            
    
		
    
            
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    更多HEF4720V供應(yīng)商
            更新時間2026-1-22 14:31:00
        
    
        
    
          
    
            
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