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    首頁 >HEF4011B>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    HEF4011BP

    Inputs and outputs are protected against electrostatic effects

    文件:269.99 Kbytes 頁數(shù):12 Pages

    恩XP

    恩XP

    HEF4011B-Q100

    Quad 2-input NAND gate

    文件:789.75 Kbytes 頁數(shù):11 Pages

    NEXPERIA

    安世

    HEF4011BT

    Inputs and outputs are protected against electrostatic effects

    文件:269.99 Kbytes 頁數(shù):12 Pages

    恩XP

    恩XP

    HEF4011BT-653

    Inputs and outputs are protected against electrostatic effects

    文件:269.99 Kbytes 頁數(shù):12 Pages

    恩XP

    恩XP

    HEF4011BT-Q100

    Quad 2-input NAND gate

    文件:789.75 Kbytes 頁數(shù):11 Pages

    NEXPERIA

    安世

    HEF4011B

    Quadruple 2-input NAND gate

    DESCRIPTION\nThe HEF4011B provides the positive quadruple 2-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

    恩XP

    恩XP

    HEF4011BT

    Quad 2-input NAND gate

    The HEF4011B is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise immunity and pattern insensitivity to output impedance.\n It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS(usually ground). Unused inputs must be connected to VDD, ? Fully static operation\n? 5 V, 10 V, and 15 V parametric ratings\n? Standardized symmetrical output characteristics\n? Specified from -40 °C to +125 °C\n? Complies with JEDEC standard JESD 13-B\n? Inputs and outputs are protected against electrostatic effects;

    Nexperia

    安世

    HEF4011BT-Q100

    Quad 2-input NAND gate

    The HEF4011B-Q100 is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise immunity and pattern insensitivity to output impedance.\n It operates over a recommended VDD power supply range of 3V to 15V referenced to VSS (usually ground). Unused inputs must be connected to V ? Automotive product qualification in accordance with AEC-Q100 (Grade 1)? Specified from -40°C to +85°C and from -40°C to +125°C\n\n? Fully static operation\n? 5 V, 10 V, and 15 V parametric ratings\n? Standardized symmetrical output characteristics\n? ESD protection:? MIL-STD-833, method 3015 excee;

    Nexperia

    安世

    HEF4011BT,652

    Package:14-SOIC(0.154",3.90mm 寬);包裝:管件 類別:集成電路(IC) 門和反相器 描述:IC GATE NAND 4CH 2-INP 14SO

    Nexperia USA Inc.

    Nexperia USA Inc.

    HEF4011BT,653

    Package:14-SOIC(0.154",3.90mm 寬);包裝:管件 類別:集成電路(IC) 門和反相器 描述:IC GATE NAND 4CH 2-INP 14SO

    Nexperia USA Inc.

    Nexperia USA Inc.

    替換型號(hào)

    技術(shù)參數(shù)

    • VCC (V):

      3.0?-?15

    • Logic switching levels:

      CMOS

    • Output drive capability (mA):

      ± 2.4

    • tpd (ns):

      20

    • fmax (MHz):

      10

    • Nr of bits:

      4

    • Power dissipation considerations:

      medium

    • Tamb (°C):

      -40~85

    • Rth(j-a) (K/W):

      107

    • Ψth(j-top) (K/W):

      19.7

    • Rth(j-c) (K/W):

      66

    • Package name:

      SO14

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    更多HEF4011B供應(yīng)商 更新時(shí)間2026-1-22 17:07:00

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