最新高清超薄CRT顯示器的高壓NPN功率晶體管

The device uses a Diffused Collector in Planar technology adopting ”Enhanced High Voltage Structure” (EHVS1) developed to fit High-Definition CRT displays. \n\n The new HD product series show improved silicon efficiency bringing updated performance to Horizontal Deflection stage. ? STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 \n? LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION \n? WIDER RANGE OF OPTIMUM DRIVE CONDITIONS \n? FULLY INSULATED POWER PACKAGE WHICH IS U.L COMPLIANT;

ST

意法半導體

HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS

DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adopting Enhance High Voltage Structure (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection

文件：187.18 Kbytes 頁數：8 Pages

STMICROELECTRONICS

意法半導體

Package：ISOWATT218FX；包裝：管件 類別：分立半導體產品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 800V 24A ISOWATT-218FX

STMICROELECTRONICS

意法半導體

High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display

Description The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizo

文件：201.8 Kbytes 頁數：10 Pages

STMICROELECTRONICS

意法半導體

Very high voltage NPN power transistor for high definition and slim CRT display

文件：226.67 Kbytes 頁數：10 Pages

STMICROELECTRONICS

意法半導體

MIL-STD-1750A MICROPROCESSOR

文件：187.52 Kbytes 頁數：2 Pages

HONEYWELL

霍尼韋爾