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                >HCT80>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          HCT801
          Dual Enhancement Mode MOSFET
          
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme?c ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are par?cularly well matched for VDS, IDS(on)
          文件：249.93 Kbytes 頁數(shù)：3 Pages
          TTELEC
          

          HCT80101EAL
          HCT8 Series High Clearance and Creepage Transformer
          
Features
n Full automation and compact size
n High voltage isolation
n Reinforced insulation for working voltage
of 800 V
n Basic insulation for working voltage of
1000 V
n Creepage distance >8.0 mm
n Clearance distance >8.0 mm
n Overvoltage Category II, Pollution Degree
2, up to 2 km ab
          文件：796.63 Kbytes 頁數(shù)：4 Pages
          BOURNS
          伯恩斯
          

          HCT80102EAL
          HCT8 Series High Clearance and Creepage Transformer
          
Features
n Full automation and compact size
n High voltage isolation
n Reinforced insulation for working voltage
of 800 V
n Basic insulation for working voltage of
1000 V
n Creepage distance >8.0 mm
n Clearance distance >8.0 mm
n Overvoltage Category II, Pollution Degree
2, up to 2 km ab
          文件：796.63 Kbytes 頁數(shù)：4 Pages
          BOURNS
          伯恩斯
          

          HCT801TX
          Dual Enhancement Mode MOSFET
          
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme?c ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are par?cularly well matched for VDS, IDS(on)
          文件：249.93 Kbytes 頁數(shù)：3 Pages
          TTELEC
          

          HCT801TXV
          Dual Enhancement Mode MOSFET
          
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme?c ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are par?cularly well matched for VDS, IDS(on)
          文件：249.93 Kbytes 頁數(shù)：3 Pages
          TTELEC
          

          HCT802
          Dual Enhancement Mode MOSFET
          
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme?c ceramic surface mount package. The devices used are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode MOSFETS are par?cularly well matched for VDS, IDS(on)
          文件：249.93 Kbytes 頁數(shù)：3 Pages
          TTELEC
          

          HCT802
          Dual En hance ment Mode MOSFET
          
Description 
HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on
          文件：233.77 Kbytes 頁數(shù)：2 Pages
          OPTEK
          

          HCT80201EAL
          HCT8 Series High Clearance and Creepage Transformer
          
Features
n Full automation and compact size
n High voltage isolation
n Reinforced insulation for working voltage
of 800 V
n Basic insulation for working voltage of
1000 V
n Creepage distance >8.0 mm
n Clearance distance >8.0 mm
n Overvoltage Category II, Pollution Degree
2, up to 2 km ab
          文件：796.63 Kbytes 頁數(shù)：4 Pages
          BOURNS
          伯恩斯
          

          HCT802TX
          Dual En hance ment Mode MOSFET
          
Description 
HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on
          文件：233.77 Kbytes 頁數(shù)：2 Pages
          OPTEK
          

          HCT802TXV
          Dual En hance ment Mode MOSFET
          
Description 
HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on
          文件：233.77 Kbytes 頁數(shù)：2 Pages
          OPTEK
          

          
            
          
		
          
            
          供應商型號品牌批號封裝庫存備注價格
          
                
          



          BOURNS
          		

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          20948
          		

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詢價
          

          



          Optek(TTElectronics)
          		

          新
          		

          		

          5
          		

          全新原裝 貨期兩周
          		
詢價
          

          



          Optek (TT Electronics)
          		

          2022+
          		

          		

          1
          		

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詢價
          

          



          TT
          		

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          SMD-6
          		

          96
          		

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          TT Electronics/Optek Technolog
          		

          22+
          		

          6SMD
          		

          9000
          		

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詢價
          

          



          TT Electronics/Optek Technolog
          		

          2022+
          		

          6-SMD
          		

          38550
          		

          全新原裝 支持表配單 中國著名電子元器件獨立分銷
          		
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          TT
          		

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          6-SMD
          		

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          TT
          		

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          6-SMD
          		

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          TT Electronics/Optek Technolog
          		

          25+
          		

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          9350
          		

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          10000
          		

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          更多HCT80供應商
            更新時間2026-1-20 16:34:00
        
          
        
          
          
          
            
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