Radiation Hardened Quad 2-Input NAND Gate

Description The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state. The HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fa

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INTERSIL

Radiation Hardened Quad 2-Input NAND Gate

Features ? 3 Micron Radiation Hardened SOS CMOS ? Total Dose 200K RAD (Si) ? SEP Effective LET No Upsets: >100 MEV-cm2/mg ? Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s ? Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse ? Cos

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RENESAS

瑞薩

Quad 2-Input NAND Gate

The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state.\nThe HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.\nThe HCS0 ? 3 Micron Radiation Hardened SOS CMOS \n? Total Dose 200K RAD (Si) \n? SEP Effective LET No Upsets: >100 MEV-cm2/mg \n? Single Event Upset (SEU) Immunity -9 Errors/Bit-Day (Typ) \n? Dose Rate Survivability: >1 x 1012 RAD (Si)/s \n? Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse \n? Cosmic Ray Upset Im;

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瑞薩

SOP-8

MICROCHIP

微芯科技

上傳：深圳市勤思達(dá)科技有限公司

SOP8

MICROCHIP

微芯科技

上傳：深圳市宏捷佳電子科技有限公司