絲?。?strong>HBN；Package：DSBGA(YFP)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1? Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch ? Low Static-Power Consumption (ICC = 0.9 μA Max) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typ) ? Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲印：HBN；Package：DSBGA(YFP)；SN74AUP1G02 Low-Power Single 2-Input Positive-NOR Gate

1 Features 1? Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch ? Low Static-Power Consumption (ICC = 0.9 μA Max) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typ) ? Low Noise – Overshoot and Undershoot

文件：2.44413 Mbytes 頁(yè)數(shù)：47 Pages

TI

德州儀器

絲?。?strong>HBN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES ? Available in the Texas Instruments NanoStar? Package ? Low Static-Power Consumption (ICC = 0.9 mA Maximum) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typical) ? Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 頁(yè)數(shù)：25 Pages

TI

德州儀器

絲印：HBN；Package：DSBGA；LOW-POWER DUAL 2-INPUT POSITIVE-NOR GATE

1FEATURES ? Available in the Texas Instruments NanoStar? Package ? Low Static-Power Consumption (ICC = 0.9 mA Maximum) ? Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V) ? Low Input Capacitance (Ci = 1.5 pF Typical) ? Low Noise – Overshoot and Undershoot

文件：816.16 Kbytes 頁(yè)數(shù)：25 Pages

TI

德州儀器

Octuple High Voltage NPN Epitaxial Planar Transistor

Description ? High breakdown voltage. (BVCEO=400V) ? Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA. ? Complementary to HBP1804M65 ? Pb-free lead plating and halogen-free package

文件：344.71 Kbytes 頁(yè)數(shù)：7 Pages

CYSTEKEC

全宇昕科技

General Purpose NPN Epitaxial Planar Transistors

Features ? Two BTN2222A chips in a SOT-363R package. ? Mounting possible with SOT-323 automatic mounting machines. ? Transistor elements are independent, eliminating interference. ? Mounting cost and area can be cut in half.

文件：168.14 Kbytes 頁(yè)數(shù)：4 Pages

CYSTEKEC

全宇昕科技

General Purpose NPN Epitaxial Planar Transistors

Features ? Two BTC2411chips in a SOT-363 package. ? Mounting possible with SOT-323 automatic mounting machines. ? Transistor elements are independent, eliminating interference. ? Mounting cost and area can be cut in half. ? High IC(Max) . IC (Max) = 0.6A ? Low VCE(sat) , TYP. VCE(sat) = 0.2V

文件：200.07 Kbytes 頁(yè)數(shù)：5 Pages

CYSTEKEC

全宇昕科技

General Purpose NPN Epitaxial Planar Transistors (dual transistors)

Features ? Two BTC2412 chips in a SOT-363R package. ? Mounting possible with SOT-323 automatic mounting machines. ? Transistor elements are independent, eliminating interference. ? Mounting cost and area can be cut in half. ? Low Cob. Typ. Cob=2.0pF ? Complementary to HBP1037S6R

文件：182.58 Kbytes 頁(yè)數(shù)：5 Pages

CYSTEKEC

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Low Vcesat NPN Epitaxial Planar Transistor (Dual Transistors)

Features ? Two BTD2444 chips in a SOT-363 package. ? Mounting possible with SOT-323 automatic mounting machines. ? Transistor elements are independent, eliminating interference. ? Mounting cost and area can be cut in half. ? Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA ?

文件：185.96 Kbytes 頁(yè)數(shù)：5 Pages

CYSTEKEC

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Low Vcesat NPN Epitaxial Planar Transistor

Features ? Two BTD2515 chips in a SOT-363 package. ? Mounting possible with SOT-323 automatic mounting machines. ? Transistor elements are independent, eliminating interference. ? Mounting cost and area can be cut in half. ? Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA. ? Wei

文件：263.3 Kbytes 頁(yè)數(shù)：6 Pages

CYSTEKEC

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