線性霍爾傳感器

注：不推薦在新設(shè)計(jì)上使用HAL830和HAL835，但目前未計(jì)劃phase-out。\n TDK-Micronas 推薦在新設(shè)計(jì)上使用HAL830P（替代HAL830）和HAL835P（替代HAL835)。\nHAL 83x系列是耐用的多功能線性位移和90°以下角度測(cè)量。作為可編程輸出低通濾波器，模擬和脈寬調(diào)制輸出讓本產(chǎn)品有了更多的靈活性。系列中的新產(chǎn)品延續(xù)了先行霍爾效應(yīng)傳感器的長(zhǎng)期成功，全部本廠生產(chǎn)，并且有汽車級(jí)百萬產(chǎn)品零缺陷記錄。\n主要參數(shù)，比如磁場(chǎng)范圍，輸出格式，敏感性，0磁場(chǎng)輸出電壓（VOQ），及溫度系數(shù)可以通過在非易失性內(nèi)存中對(duì)磁電路（線性和二次）編程來進(jìn)行調(diào)整。產(chǎn)品具有帶斬 ·High-precision linear Hall-effect sensor with 12-bit analog output\n·Offset drift over temperature less than ±0.2% of VSUP (±0.1% for HAL 835)\n·Programmable temperature compensation for sensitivity\n·Open-circuit (ground and supply line break) detection with 5 kΩ pull-up and pull-down resi;

TDK-Micronas

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

General Description This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant

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HUASHAN

華汕電子器件

500V N-Channel MOSFET

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